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外文翻译-先进的毫秒范围内半导体材料热加工技术，共10页，6251字
摘要：
 本文概述了我们最近在毫秒闪光灯退火(flash lamp annealing ,简称FLA)得到热处理的先进半导体结构领域中的工作。涵盖的主题包括超浅连结(ultra-shallow junction，简称 USJ)的形成和改质立方碳化硅(3C-SiC)薄膜的异质外延生长。后者是一个新的发展方向,它会揭露大有前途的3C-SiC增长的潜在价值,并可能导致FLA的广泛应用。所谓的FLA SiC过程(闪光支持的SiC沉积)是基于一种新型的纳米级液相在SiC / Si界面取向附生形成一个薄、低缺陷密度的SiC种子层，在种子层上更厚的外延SiC层可以取向附生。
 ?2005年爱思唯尔版权所有。
关键词：闪光灯退火，超浅结， 异质外延，SiC / Si

Advanced thermal processing of semiconductor materials in the millisecond range
Abstract
 The paper gives an overview of our recent work in the field of thermal processing of advanced semiconductor structures by millisecond flash lamp annealing (FLA).Topics covered include ultra-shallow junction (USJ) formation and heteroepitaxial growth of improved quality thin films of cubic silicon carbide (3C-SiC).The latter is a new development, which opens up promising 3C-SiC growth possibilities and may lead to wider application of FLA.The socalled FLASiC process (Flash LAmp Supported Deposition of SiC) is based on a new type of nanoscale liquid-phase epitaxy at the SiC/Si interface resulting in the formation of a thin, low-defect density seed layer of SiC onto which thicker epitaxial SiC layers can be grown.